The escalating consumer market and rapid development of technological innovation have driven upstream and downstream industries in many fields such as 5G, artificial intelligence, and industrial Internet, and the semiconductor market is also ushering in huge development opportunities.
As the core materials supporting the “semiconductor industry”, the third-generation semiconductors led by gallium nitride (GaN) and silicon carbide (SiC) and the fourth-generation semiconductor materials represented by gallium oxide (Ga2O3) and diamond (Diamond), In recent years, it has received increasing attention.
Different from the first and second generation semiconductor materials, the third generation semiconductor materials have the characteristics of high frequency, high efficiency, high power, high pressure resistance, high temperature resistance, and radiation resistance. They are important in 5G, new energy vehicles, consumer electronics, aerospace and other fields. application.
The fourth-generation semiconductor materials are smaller in size, lower in energy consumption, and more powerful. They can be better used in optoelectronic devices and power electronic devices under harsh environmental conditions-a breakthrough in gallium oxide crystal growth technology in recent years The progress has greatly promoted the research of related solar-blind ultraviolet photoelectric devices and high-power power electronic devices, which is of great strategic significance to the people's livelihood and national defense.
At the end of 2017, BJJZ Gallium Group Material Technology Co., Ltd., as the first domestic and second international high-tech company specializing in the development and application of the fourth-generation (ultra-wide band gap) semiconductor gallium oxide materials, successfully developed and Production of high-quality single crystal and epitaxial substrates, high-sensitivity solar-blind ultraviolet detectors, high-frequency high-power devices based on the new ultra-wide bandgap semiconductor material gallium oxide
As the technical director of BJJZ and one of the company’s co-founders, Commissar Chen returned to China after studying for a master’s degree in Japan. During his study abroad, Commissar Chen’s research direction was gallium oxide, and Japan was the first in the world to start studying the third and first generations. One of the frontier countries for R&D and industrialization of fourth-generation semiconductor materials.
This unique experience made Political Commissar Chen decide to devote himself to the production, education and research of a new generation of ultra-wide bandgap semiconductor gallium oxide materials.
Political Commissioner Chen said: As an ultra-wide bandgap semiconductor material with unique optoelectronic and power properties, gallium oxide has become the most promising material in the field of power electronic devices after silicon in recent years.
He pointed out that the current market has three major pain points in the use of semiconductor materials: "Firstly, due to the low conversion efficiency of silicon power devices, there will eventually be a large power loss; and currently in the low- and medium-voltage market ≤1700V, silicon-based implementation is difficult, Silicon carbide and gallium nitride are expensive; most importantly, in the current UHV market, no suitable materials for UHV power devices have yet appeared."
BJJZ has developed a gallium oxide-based solar-blind ultraviolet detector discrete device and array imaging device, which provides a good solution for deep ultraviolet optoelectronic devices, which can support real-time detection of extremely weak flames and extremely weak arcs, and has launched a systematic module.
The gallium oxide-based Schottky diode is one of the earliest gallium oxide-based power electronic devices to enter the market. The gallium family and its partners have achieved 1000V withstand voltage Schottky diode model production, and have achieved 5000V withstand voltage MOSFET Model making.
Political commissar Chen revealed that BJJZ has now applied for more than 40 patents and has completed all preparations for mass production requirements such as the preliminary technology, personnel, software and hardware for the industrial pilot test.
The company has a plant area of 6,500 square meters, covering a complete industrial pilot production line, with R&D and small-batch production capabilities, and has initially built an oxide monocrystalline substrate, gallium oxide heterogeneous/homogenous epitaxial substrate production and R&D platform. In the future, we will continue to improve the six platforms of crystal growth, crystal processing, epitaxial film performance testing, micro-nano processing, and joint research and development.
BJJZ currently has 130 employees, of which 85% are technical personnel. The core team members are all Ph.Ds from the United States, Japan, and Germany, or Ph.Ds from famous domestic universities such as Tsinghua University and Nankai University. Chen Zhengwei is a PhD from Kyushu Synchrotron Optical Radiation Center, Saga University, Japan, and has long-term practical experience in semiconductor device research.
At present, most of the customers served by BJJZ are colleges and universities. Up to now, it has served more than 30 well-known domestic universities including China University of Science and Technology, Southern University of Science and Technology, Xidian University.
In 2019, BJJZ began to open services to industrialization companies, and has now provided upstream materials for more than 100 research institutions and corporate customers engaged in the development of gallium oxide back-end devices across the country, including China Electric Power, China Aerospace, State Grid Corporation, and Southco.
In the international market, the United States, Singapore, South Korea and some European countries also have a large amount of demand for use. BJJZ has provided sample devices for customers in multiple international markets.