High-purity arsenic, China's high-end semiconductor raw material, breaks foreign monopoly
The SDHB high-purity new material project in YTHB Industrial Park is about to enter the trial run stage. At the end of this year, high-purity arsenic products with a purity of 7.5 9s will be mass-produced, breaking the long-term monopoly of China's high-end semiconductor raw materials by developed countries.
High-purity arsenic is a new type of high-end semiconductor material, and its compounds gallium arsenide, tellurium arsenide, indium arsenide, etc. have been widely used in microelectronics, optoelectronics and other fields, and play an important role in aerospace, 5G communications, military industry and other industries .
Zou Lin, manager of SDHB High Purity New Material Technology Co., Ltd. said, “Two nines of arsenic products sell for 10,000 yuan per ton, while seven nines of foreign high-purity arsenic products can sell for 1.8 million yuan. This is the gap.” For a long time, China Domestic companies can only produce 5 9 or 6 9 arsenic products, and they have long relied on products from developed countries such as Japan, the United States, and Germany.
SDHB High Purity New Material Technology Co., Ltd. is an A-share company SDHB Technology Group, whose business scope includes high-purity new materials and non-ferrous metal smelting.
On March 3 this year, SDHB's "High-Purity Materials R&D and Industrialization Project" was officially launched as a key project of the whole district. The project has a total investment of 340 million yuan and covers an area of 80 mu. It will mainly build four production lines of high-purity arsenic, high-purity antimony, high-purity bismuth, and high-purity tellurium.
As of the end of September, the project has completed an investment of 25 million yuan, the main civil construction of the high-purity arsenic production line has been completed, the installation of equipment and electrical instruments has been completed, the overall project was completed in October, and the trial run with materials in November will be put into operation at the end of the year. Zou Lin said that after the completion of the project, the project will have an annual production capacity of 50 tons of high-purity arsenic, 50 tons of high-purity antimony, 50 tons of high-purity bismuth, and 20 tons of high-purity tellurium. The annual sales revenue will increase by 100 million yuan and the profit and tax will be 6000. Ten thousand yuan, to completely break the foreign technical blockade and monopoly on the materials required by China's national weapons, and allow China's core equipment to use its own materials.
Strong demand for semiconductor material gallium arsenide
As early as April 28, 2019, SDHB announced the signing of the "Science and Technology Cooperation Agreement" with the Institute of Technology. The two parties will carry out scientific research and achievement transformation cooperation in the fields of arsenic, antimony, bismuth, tellurium, selenium high-purity materials and semiconductor materials. And to establish a cooperative relationship in personnel training and high-purity metal materials research center.
The global demand for gallium arsenide is increasing at an annual rate of 20-25%, and only a few developed countries can produce high-purity arsenic. The annual output of high-purity arsenic is 40 tons in the United States, 60 tons in Japan, 30 tons in Germany, and the United Kingdom. 30 tons. At present, China's domestic high-purity arsenic is mainly dependent on imports, and the demand for localization is urgent. As the market demand for semiconductor material gallium arsenide increases, it will inevitably drive the development and production of upstream high-purity arsenic products.
The third-generation semiconductor theme is hot again
As the core materials of second-generation semiconductors, gallium arsenide (GaAs) and indium antimonide (InSb) are mainly used to make high-frequency, high-speed and high-power electronic devices. They are used in satellite communications, mobile communications, and optical communications. Wide range of applications. Gallium arsenide and indium phosphide semiconductor lasers have become key devices in optical communication systems. At the same time, gallium arsenide high-speed devices have also opened up new industries in optical fiber and mobile communications. According to the rough statistics of the Securities Times·Databao, there are only three A-share companies whose main products include gallium arsenide, namely SA Optoelectronics Technology Group, QZ Optoelectronics Technology Group, and YNZY Germanium Material Technology Group.
At present, China is moving towards the third generation of semiconductors, which are mainly represented by gallium nitride (GaN), silicon carbide (SiC), zinc oxide (ZnO), and diamond. In the A-share market, many leading companies in the industry have also been born, such as SA Optoelectronics Technology Group, WT Electronic Material Technology Group, and JSLXd Advanced Materials Technology Group.