Silicon carbide substrate material is a new generation of semiconductor materials, and its application field has strong strategic significance. China is gradually growing into one of the main competitive markets for the production of global wide-bandgap semiconductor materials.
Silicon carbide substrates will still face the challenges of difficult preparation and high cost in the short term. At present, the price of silicon carbide power devices is still several times that of silicon-based devices. Downstream applications still need to balance the high price of silicon carbide devices and the high cost of silicon carbide devices. The relationship between the overall cost reduction brought about by the superior performance.
Silicon carbide semiconductors are mainly used in the radio frequency field represented by 5G communications, national defense and military industry, and aerospace, as well as in the fields of new energy vehicles and power electronics. They have clear and considerable market prospects in the civilian and military fields.
On August 18, China`s leading silicon carbide substrate manufacturer: SDTY Semiconductor Material Technology Group announced that the company will invest 2.5 billion RMB to build a new 6-inch semi-insulating silicon carbide substrate production base, and it is expected to start commercial production in early 2023. By then, the production capacity of silicon carbide substrate materials will be increased by approximately 400,000 pieces/year.