As a national strategic emerging industry project, ZKGY Silicon Carbide has been applied in many high-tech fields after years of research and development in China and combined with the introduction of foreign high-tech technologies. Recently, the major large-scale project tour approached the ZKGY Silicon Carbide Project settled in Laixi City. Laixi will become the main production base of silicon carbide in China.
Laixi City Silicon Carbide Production Base
As a high-precision technology, silicon carbide has become one of the new semiconductor materials with the most attention today due to its excellent performance under high temperature, high pressure, and high frequency conditions. Power electronic components made of silicon carbide materials can work in extreme environments and harsh environments, and are especially suitable for military weapon systems, aerospace, petroleum geological exploration, high-speed railways, new energy vehicles, solar inverters and industrial drives. Application fields of high power power conversion.
At present, the production base of the Silicon Carbide Project of ZKGY can produce 4 to 6 inches of silicon carbide wafers with an annual output value of 800 to 1 billion yuan. The focus is on the military field. According to Zhang Yan, chairman of China Steel Research Institute of Energy Conservation Technology Co., Ltd., the biggest advantage of silicon carbide wafers is that their wide band gap and high current breakdown resistance are 10-30 times that of ordinary silicon. In many high-end areas, the life of silicon carbide is longer than ordinary silicon.
"For example, in terms of radar detection range, after advanced countries use silicon carbide technology, their radar detection distance can reach 2500 kilometers, while China can only reach 1200 kilometers. Therefore, the military application of domestic silicon carbide technology can also let our radar The detection distance has caught up with advanced countries. "Zhang Yan said. In addition, another advantage of silicon carbide is energy saving. Using silicon carbide can make the volume very small, and the energy saving effect can reach 20-25%. Therefore, it will replace silicon and second-generation semiconductors in the high-end field.
Cost-effective domestic silicon carbide will be used in more fields
In recent years, silicon carbide has been widely used in China. Experts generally believe that the second half of 2020 to 2022 will be the year of the third generation of semiconductors. It has become a consensus to replace silicon products with silicon carbide and second-generation semiconductors.
As for the application of silicon carbide, reducing the cost and increasing the qualified rate of domestic silicon carbide will become the basis of the industry's popularity. At present, the domestic silicon carbide technology qualification rate can reach about 45-48%, and it is expected that the qualification rate can be increased to more than 65% in the next two years, close to the highest level in Europe and the United States.