To achieve this technological breakthrough, they developed a silicon carbide crystal material that can be used for LED lamps with a service life of more than 130,000 hours. If calculated based on 8 hours of light per day, it can be used for 45 years.
Researchers said that the life of this kind of LED lamp depends on the materials used. Currently, the LED lamps on the market are generally marked as "usable for more than 50,000 hours" in the instructions for use. From this point of view, more than 130,000 hours Is a very long life.
According to calculations, if silicon carbide LED lamps are used to replace all incandescent lamps or partially replaced fluorescent lamps, it is estimated that one third of the lighting power consumption can be saved in a year, that is, 100 billion kWh, which is equivalent to the annual power generation of the Three Gorges Hydropower Station.
About SDTY
Established in November 2010, SDTY Company is a high-tech enterprise mainly based on silicon carbide semiconductor substrate materials. The company has invested in and built a third-generation semiconductor material industrialization base, which has the software and hardware requirements for R & D and production of advanced semiconductor substrate materials. It is an advanced enterprise in China's third-generation semiconductor substrate material industry.
SDTY Company is the chairman unit of China Wide Bandgap Semiconductor Industry Alliance under the supervision of the Ministry of Industry and Information Technology of the People's Republic of China. The company owns national platforms such as the National and Local Joint Engineering Research Center for Silicon Carbide Semiconductor Materials R & D Technology, national post-doctoral research workstations, and two provincial R & D platforms. It has more than 290 patents, including more than 80 invention patents. First prize for invention. The company has strong technical strength. It has 4 R & D centers abroad, a domestic R & D team led by more than ten doctors, and more than 60 domestic and foreign industry experts. The company has successively undertaken more than ten national and provincial-level scientific research and industrialization projects, including national new material research and development and industrial projects, national 863 plan projects, and national major scientific and technological achievements transformation projects.
Conductive silicon carbide substrate material
N-type silicon carbide substrate material is an important material necessary to support the development of the power electronics industry. Its outstanding physical characteristics such as high voltage resistance and high frequency resistance can be widely used in high-power high-frequency electronic devices, electric vehicle PCUs, photovoltaic inverters, rail transit power control systems and other fields, reducing the size, simplifying the system, and improving power density Role…
Optoelectronics field
Power electronics field
Microwave communication field
As a wide band gap semiconductor material, SiC also has a wide operating frequency band (0 ~ 400GHz), coupled with its excellent high temperature characteristics, high breakdown electric field, high thermal conductivity and electronic saturation rate, and other characteristics in microwave communications The field also has its place. Achieve high efficiency, high mobility, high band and miniaturization of communication devices, especially for T / R components above the X band, and the application in 5G communication base stations has attracted much attention.
6 inch-conductive silicon carbide substrate material
The company independently developed a 6-inch N-type silicon carbide substrate. The product is processed by a single positioning edge according to international conventions. The thickness is 350 ± 25 microns and the density of microtubes per square centimeter is less than one.
Optoelectronics field
Power electronics field
Microwave communication field
A light emitting diode (LED) is an electronic component that uses electrons and holes in a semiconductor to emit light in combination, and is an energy-saving and environmentally-friendly cold light source. SiC material has the advantages of small lattice mismatch with GaN, high thermal conductivity, small device size, strong antistatic ability, and high reliability. It is an ideal substrate for GaN epitaxial materials. Due to its good thermal conductivity, it has solved The heat dissipation problem of power GaN-LED devices is particularly suitable for preparing high-power semiconductor lighting LEDs, which greatly improves the light output efficiency and can effectively reduce energy consumption.