HZJR Semiconductor Materials Technology Corporation recently announced:
HZJR collaborated with the Advanced Semiconductor Research Institute of Zhejiang University and the National Key Laboratory of Silicon and Advanced Semiconductor Materials to successfully develop high-quality 6-inch unintentionally doped and conductive gallium oxide single crystals, and successfully processed and manufactured 6-inch gallium oxide substrates.
This also makes HZJR the first industrial company in China to master the preparation technology of 6-inch gallium oxide single crystal substrates.
Gallium oxide has attracted much attention due to its excellent performance and low-cost manufacturing, and is one of the fourth generation semiconductor materials.
This material is mainly used for power devices, RF devices, and detectors, and has broad application prospects in fields such as rail transit, smart grids, new energy vehicles, photovoltaic power generation, 5G mobile communication, and national defense and military industry.
The casting method used in this research and development has many significant advantages:
Firstly, the casting method has a lower cost as it uses a large amount of precious metal Ir to reduce usage and loss, resulting in a significant reduction in cost;
Secondly, the casting method has simple and controllable operation, short process flow, high efficiency, and easy size enlargement;
In addition, this process has completely independent intellectual property rights and has obtained patent authorization in China and the United States, laying a solid foundation for breaking through foreign technology monopolies and achieving domestic substitution.