Last week, Porotech, an independent gallium nitride technology company derived from the University of Cambridge, used its unique porous GaN production technology to prepare and launch the world's first natural red gallium nitride epitaxial wafer for micro LEDs.
The amount of ordinary red LED is the largest of all LEDs at present. The core basic material for traditional red LED light-emitting diodes is a gallium phosphide-based red epitaxial wafer (common material is AlInGaP). According to Porotech’s explanation, Due to the long carrier diffusion length and the high surface recombination rate, as the size of the device decreases, their efficiency will drop sharply.
Porotech technology can produce a new type of porous GaN semiconductor material
Dr. Zhu Tongtong, CEO and co-founder of Porotech, commented: “It is widely believed that micro LED displays using GaN-based material technology are the only technology that can provide brightness and efficiency sufficient to meet AR requirements.”. "As AR glasses are expected to one day replace smartphones, or at least reduce our interaction with pocket devices, it is crucial to develop advanced materials to improve performance." Our breakthrough expands the emission range of InGaNLEDs to meet the performance of red displays At the same time, the wafer size control required by the micro LED semiconductor display technology is realized.