In microelectronic devices, the forbidden band width is the main factor that determines the conductive properties of materials. Substances with large band gaps are generally not conductive and are called insulators. A substance with a smaller band gap is called a semiconductor. Ultra-wide bandgap semiconductor material is a new type of semiconductor material, which has higher operating temperature and power than traditional silicon-based small bandgap materials. Ultra-wide band gap semiconductor substrates are usually made of materials such as silicon carbide (SiC) and gallium nitride (GaN).
In the Journal of Applied Physics published by API, researchers at the University of Florida, the U.S. Naval Research Laboratory, and the University of Korea have discussed the properties, performance, and current limitations of the most promising ultra-wide bandgap material, gallium oxide (Ga2O3). And the future development presents a detailed outlook.
Gallium oxide has an ultra-wide band gap of 4.8eV, which exceeds 3.3eV for SiC and GaN, while silicon has only 1.1eV. The ultra-wide band gap allows gallium oxide to withstand stronger electric fields than silicon, silicon carbide, and gallium nitride. In addition, gallium oxide can also withstand higher voltages. This makes it very valuable in manufacturing miniaturized and efficient high-power transistors.
"Gallium oxide provides semiconductor manufacturers with a very suitable material for microelectronic devices," said Stephen Pearton, a professor of materials science and engineering at the University of Florida and author of the paper. "This compound is very suitable for use in power distribution systems that charge electric vehicles, and converters that transmit electricity to the grid."
Pearton and his colleagues also investigated the possibility of gallium oxide as a metal oxide semiconductor field effect transistor (MOSFET) material. "Traditionally, tiny electronic switches are made of silicon and are used in laptops, smartphones and other electronics. But for electric vehicle charging systems, higher power-level MOSFET devices are needed, which will be oxidation The advantages of gallium. "
In order to implement these advanced MOSFETs, the authors need to improve the gate dielectric and more effective heat treatment methods. Pearton concluded that gallium oxide will not replace SiC and GaN as the fourth-generation semiconductor materials, but it is more likely to play a role in high-power, high-voltage devices. Pearton said that the most promising application of gallium oxide materials is probably as high-voltage rectifiers for electric vehicles and photovoltaic solar systems.