American GT Advanced Technologies (GTAT) and ON Semiconductor today announced the implementation of a five-year agreement with a potential value of $ 50 million. Under the agreement, GTAT will produce and supply CrystX ™ silicon carbide (SiC) materials for ON Semiconductor, a global leader in energy conservation innovation, for high-growth markets and applications.
It is understood that GTAT mainly produces silicon carbide and sapphire materials for high-growth markets. GTAT Chairman and Chief Executive Officer Greg Knight said that today ’s agreement will help address the grim trend of SiC as the preferred semiconductor substrate material in power electronics applications.
Brent Wilson, senior vice chairman of ON Semiconductor's global supply chain, added that combining ON Semiconductor's 40 years of experience in mass wafer production with GTAT's expertise and the rapid development of SiC crystal growth will provide dynamic high-power broadband The gap market creates a strong and scalable supply chain.
High-growth applications such as electric vehicle (EV) traction systems, hybrid and plug-in EVs, solar and energy storage, and EV charging also require and rely on a strong supply of high-quality and cost-competitive SiC materials. ON Semiconductor will use GTAT's proprietary 150mm SiC crystals to make SiC chips to further enhance its role as a one-stop supplier in the SiC supply chain and maintain world-class supply levels. The agreement will promote the availability of industry-leading SiC in high-growth applications such as electric vehicle (EV) traction and help engineers solve the industry's most unique design challenges.
The data shows that GTAT is a leading global supplier, mainly supplying polysilicon production technology and sapphire and silicon crystal growth systems and materials for solar energy, LED and other professional markets. The company's ASF ™ sapphire growth system is a production-proven furnace that produces high-quality sapphire materials for the LED industry.