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Successful trial production of GaN materials for 5G chips in China

The reporter learned from the Wuhu Research Institute of Xidian University that, as a key project of Wuhu Research Institute, the domestic production of 5G communication chip gallium nitride materials has been successfully trial-produced at Xidian Wuhu Research Institute recently, which marks the major domestic chips in the future. The company produces 5G communication chips and is expected to use domestic materials.

According to reports, gallium nitride semiconductor materials have excellent physical and chemical properties such as wide band gap, high breakdown field strength, high thermal conductivity, low dielectric constant, high electron saturation drift speed, strong radiation resistance, and good chemical stability. It has become the key material for the preparation of next-generation microelectronic devices and circuits after the first-generation semiconductor silicon and the second-generation semiconductor gallium arsenide, and is particularly suitable for the development of high-frequency, high-power, high-temperature and radiation-resistant electronic devices and circuits.

The Wuhu Research Institute of Xidian University relies on the State Key Discipline Laboratory of Western Electric's Wide Band Gap Semiconductor Technology to develop a nationally produced silicon carbide substrate-based gallium nitride material. At present, it is at the leading level in the third generation of semiconductor technology in the world. Will assist the localization process in the field of 5G communications manufacturing. Chen Xing, Technical Director of Wudian Research Institute of Western Electric said that the research institute has now mastered the production of gallium nitride materials and the core design and manufacturing capabilities of 5G communication chips. In the next step, they will commercialize this technology as soon as possible and strive to bring it to market as soon as possible.

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