On May 20, the G4.5 generation line lanthanide rare earth doped metal oxide (Ln-IZO) target developed and produced by GDXD Electronic Film Material Technology Group was successfully delivered to Huaxing Optoelectronics, which is the first domestic G4.5 generation High mobility oxide target.
The target is based on the high-mobility rare-earth doped oxide semiconductor material for thin-film transistors invented by South China University of Technology. It is a new-generation TFT semiconductor channel layer material, and its advanced performance can meet the future ultra-high-definition display, flexible display channel Application requirements of layer materials.
In 2019, GDXD teamed up with South China University of Technology, Guangzhou New Vision Optoelectronics Technology Co., Ltd., Shenzhen Huaxing Optoelectronic Semiconductor Display Technology Co., Ltd., and Guangdong Semiconductor Industry Technology Research Institute to form an industry-university-research technology team from basic research to product application.
The team is based on the new rare-earth doped metal oxide target (Ln-IZO) technology developed by the team of academicians Cao Yong of the State Key Laboratory of Luminescent Materials and Devices of South China University of Technology, and is based on the development and mass production of lead thin film targets Technology as the core, combined with material basic research and TFT device process technology, launched the "Research and Application of High Mobility Oxide Semiconductor Sputtering Targets for Thin Film Transistors" project. After repeated research and development tests, this G4.5 Ln-IZO target was developed and delivered to Huaxing Optoelectronics, which is the first important achievement of the project.