At the 2019 European PCIM Power Electronics Trade Show, ON Semiconductor showcased new silicon carbide (SiC) -based hybrid IGBTs (Insulated Gate Bipolar Transistors) and isolated high current IGBT gate drivers. These products use silicon-based IGBTs, combined with SiC Schottky diode technology, to take full advantage of the efficiency advantages of SiC technology and the cost advantage of silicon.
AFGHL50T65SQDC uses the latest field-cut IGBT and SiC Schottky diode technology to reduce conduction and switching losses in a variety of power applications, including those that will benefit from reduced reverse recovery losses, such as totem pole-based bridgeless Power factor correction (PFC) and converter. The performance of silicon-based solutions is low, and the cost of a completely SiC-based solution is higher. This device combines a silicon-based IGBT with a SiC Schottky barrier diode to achieve a good balance between performance and cost. It has a rated operating voltage of 650V and can handle continuous currents up to 100 A @ 25 ° C (50 A @ 100 ° C) and pulsed currents up to 200 A. For systems that require greater current capability, a positive temperature coefficient makes parallel operation easy.
Modern electric vehicles not only rely on energy to drive, in some cases, they can also store energy to power homes during peak hours. Therefore, a two-way charger is needed, which can switch and charge with high efficiency and ensure that energy is not wasted during transmission. In such use cases, IGBTs with external SiC diodes are more effective than MOSFET solutions because there is no forward or reverse reset loss. AFGHL50T65SQDC can operate at a junction temperature of up to 175 ° C and is suitable for very demanding power applications, including automobiles. In addition, it is fully AEC-Q101 compliant and can be used for on-board chargers for electric and hybrid vehicles.
In addition to the new hybrid IGBT, ON Semiconductor will also release a series of isolated high current IGBT drivers on PCIM. The NCD (V) 57000 series is targeted at a variety of power applications, including solar inverters, motor drives, uninterruptible power systems (UPS), and automotive applications such as power systems and PTC heaters.
The NCD (V) 57000 series is a high-current single-channel IGBT driver with an internal current safety isolation design, which can operate efficiently in demanding power applications. The device has complementary inputs, open-drain fault and ready outputs, active Miller clamping, precision undervoltage lockout, soft-shutdown desaturation protection, negative gate voltage pins, and independent high and low driver outputs, enabling system design flexibility. Its rated current isolation value is greater than 5 kVrms, which complies with UL1577 standard. The working voltage is higher than 1200V. It guarantees 8mm creepage distance (input> output), which can meet the requirements of enhanced safety isolation. NCD (V) 57000 can generate 7.8A drive current and 7.1A sink current, which is more than three times that of some competing products. More importantly, the current capability is stronger when Miller Plateau is operating in the switching waveform. Coupled with leading protection features, it can be called a first-class IGBT driver.