Plessey Semiconductor has released a press release announcing that it has purchased the AIX G5 C organic metal chemical vapor deposition (MOCVD) reactor from AIXTRON. Previously, the company had ordered a reactor from Acetron.
Plaths is committed to using silicon-based gallium nitride epitaxial wafers to produce the next generation of Micro LED applications, while Axtron ’s MOCVD reactor will enhance its silicon-based gallium nitride epitaxial wafer manufacturing capabilities. The company intends to install and put this reactor into operation at its manufacturing plant in Plymouth (270,000 square meters) during the first quarter of 2019.
The new Acetron reactor provides an automated cassette (C2C) wafer transfer module. The wafer transfer module has two independent cavity configuration options, enabling 8×6-inch or 5×8-inch GaN-on-silicon epitaxial wafers in closed Automatic loading and removal in the cassette environment. The existing Acetron MOCVD reactor from Platts can be manually loaded with 7×6-inch or 3×8-inch epitaxial wafers.
The new reactor's automated cleaning technology ensures that the equipment is cleaned every time it runs, helping to reduce wafer defect rates and significantly reduce maintenance downtime. In addition, the new device has faster ramp-up and cooling and a high base unloading temperature, which reduces recipe time.
According to Price, the AIX G5 C reactor can enhance the research and development capabilities of monolithic Micro LEDs based on the company's proprietary silicon-based gallium nitride technology. The company's Micro LED has the characteristics of extremely low power consumption, high brightness and ultra-high pixel density, which will bring potential impact to the existing application fields using traditional technologies such as LCD and OLED.
Price is aiming to become a global leader in the development of innovative display engines and full-field self-luminous Micro LED displays. This device combines an ultra-high-density RGB pixel array with a high-performance complementary metal-oxide-semiconductor (CMOS) backplane. It features high brightness, low power consumption, and high frame rate image sources. It can be used as a head-mounted type for AR / VR systems. Displays and wearable electronics.