Silicon nitride substrate (Si3N4) has excellent high thermal conductivity, low thermal expansion coefficient and high thermal shock resistance, and excellent mechanical properties. Its Flexural strength and Fracture toughness are more than twice that of aluminum nitride and aluminum oxide, becoming one of the key materials of high-power third-generation semiconductor. With the continuous development of power Semiconductor industry, aerospace, rail transit, electric vehicles, photovoltaic inverter Various scenarios such as smart grids require the application of silicon nitride ceramic substrates.
Silicon nitride substrate is also a world-class strategic material, currently the best ceramic substrate material with high thermal conductivity and reliability in the world. Due to its high comprehensive performance, research and development are difficult, especially for As fired Si3N4 substrate. Currently, countries such as the United States and Japan are in a monopoly position in this field.
Some research institutions and advanced ceramic technology enterprises in China have made significant research and development investments to change the current situation and enhance domestic production capacity.
NXAS Advanced Ceramic Technology Corporation, as a leading enterprise in the production of aluminum nitride ceramic substrates, is also the first mass production enterprise in China to produce aluminum nitride fired ceramic substrates. It has accumulated a lot of relevant experience in the research and production of fired ceramic substrates.
The NXAS R&D team has been dedicated to the research and development of silicon nitride substrates since 2016. Currently, they have broken through the technological bottlenecks of casting, gluing, sintering, and post-treatment of instant fired silicon nitride substrates, achieving mass production of silicon nitride substrates, and forming a series of silicon nitride substrate products with different powders to meet the different needs of downstream enterprises for substrate performance.
The company was established in the production base of aluminum nitride/silicon nitride and HTCC in 2018. Currently, it has achieved a production capacity of 3.2 million silicon nitride substrates per year and 5 million aluminum nitride substrates per year.
NXAS will continue to make technological progress and make breakthroughs in high thermal conductivity silicon nitride substrates and low-cost silicon nitride substrates, meeting the needs of different customers and becoming a professional substrate supporting enterprise for IGBT power semiconductors.